Semiconductor manufacturing apparatus and operating method thereof

ABSTRACT

Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. nonprovisional application claims priority under 35 U.S.C §119 to Korean Patent Application No. 10-2020-0069511 filed on Jun. 9,2020 in the Korean Intellectual Property Office, the disclosure of whichis hereby incorporated by reference in its entirety.

BACKGROUND

The present inventive concepts relate to a semiconductor manufacturingapparatus and an operating method thereof, and more particularly, to anextreme ultraviolet light source and an operating method thereof.

Lithography using an extreme ultraviolet (EUV) light source is expectedfor micro-fabrication of next-generation semiconductors. Lithography isa technique in which a silicon substrate receives a reduced beam orlight projected thereto through a mask on which circuit patterns aredrawn to form electronic circuits on the silicon substrate, and extremeultraviolet light means a ray whose wavelength ranges from about 1 nm toabout 100 nm. Because circuits formed by optical lithography have theirminimum processing dimension that basically depends on the wavelength ofa light source, it is essential to reduce the wavelength of the lightsource for the development of next-generation semiconductors, and thusresearch is actively conducted on the advancement of EUV light sources.

SUMMARY

Some example embodiments of the present inventive concepts provide asemiconductor manufacturing apparatus and an operating method thereof,which apparatus has improved stability and increased productivity.

Objects of the present inventive concepts are not limited to thatmentioned above, and other objects which have not been mentioned abovewill be understood to those skilled in the art from the followingdescription.

According to some example embodiments of the present inventive concepts,a semiconductor manufacturing apparatus may include: an oscillation unitincluding a first seed laser, a second seed laser, and a seed module,wherein the first seed laser is configured to oscillate a first pulse,and wherein the second seed laser is configured to oscillate a secondpulse; and an extreme ultraviolet generation unit configured to use thefirst and second pulses to generate extreme ultraviolet light. The seedmodule may include: a plurality of mirrors configured to allow the firstand second pulses to travel along first and second paths, respectively;and a pulse control optical system including a first optical element, asecond optical element, and a third optical element. The pulse controloptical system may be provided on the second path that does not overlapthe first path. The third optical element may include a lens between thefirst optical element and the second optical element.

According to some example embodiments of the present inventive concepts,a semiconductor manufacturing apparatus may include: an oscillation unitthat includes a first seed laser, a second seed laser, and a seedmodule, wherein the first seed laser is configured to oscillate a firstpulse, and wherein the second seed laser is configured to oscillate asecond pulse; an extreme ultraviolet generation unit including a targetgenerator and a focusing mirror, wherein the extreme ultravioletgeneration unit is configured to generate extreme ultraviolet light byallowing the first and second pulses to collide with correspondingtargets produced from the target generator; an amplification unitbetween the oscillation unit and the extreme ultraviolet generationunit, wherein the amplification unit includes a plurality of amplifiers;a transport unit configured to allow the first and second pulses totravel from the amplification unit to the extreme ultraviolet generationunit; and an exposure unit configured to provide a wafer with theextreme ultraviolet light generated from the extreme ultravioletgeneration unit. The seed module may include: a plurality of mirrorsconfigured to allow the first and second pulses to travel along firstand second paths, respectively; a pulse control optical system includinga first optical element, a second optical element, and a third opticalelement; and at least one camera configured to monitor the first pulseor the second pulse. The pulse control optical system may be provided onthe second path that does not overlap the first path. The third opticalelement may include a lens between the first optical element and thesecond optical element.

According to some example embodiments of the present inventive concepts,an operating method of a semiconductor manufacturing apparatus mayinclude: oscillating a first pulse and a second pulse from anoscillation unit that includes a first seed laser, a second seed laser,and a seed module; controlling the second pulse on a path of the secondpulse in the seed module, wherein the path of the second pulse does notoverlap a path of the first pulse; amplifying the first and secondpulses through a plurality of amplifiers; and colliding the first andsecond pulses with corresponding targets to generate extreme ultravioletlight. The step of controlling the second pulse may be performed in apulse control optical system including a lens.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a conceptual block diagram showing a semiconductormanufacturing apparatus and an operating method thereof according tosome example embodiments of the present inventive concepts.

FIG. 2 illustrates an enlarged schematic diagram showing an extremeultraviolet generation unit and an exposure unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts.

FIGS. 3 to 5 illustrate conceptual schematic diagrams showing paths ofpulses in an oscillation unit of a semiconductor manufacturing apparatusaccording to some example embodiments of the present inventive concepts.

FIGS. 6 to 9 illustrate conceptual schematic diagrams corresponding tosection A of FIGS. 3 to 5, respectively, partially showing anoscillation unit of a semiconductor manufacturing apparatus according tosome example embodiments of the present inventive concepts.

DETAILED DESCRIPTION OF EMBODIMENTS

The following will now describe a semiconductor manufacturing apparatusand an operating method thereof according to some example embodiments ofthe present inventive concepts in conjunction with the accompanyingdrawings.

FIG. 1 illustrates a conceptual block diagram showing a semiconductormanufacturing apparatus and an operating method thereof according tosome example embodiments of the present inventive concepts.

Referring to FIG. 1, a semiconductor manufacturing apparatus accordingto the present inventive concepts may be or include an extremeultraviolet light source 1. The extreme ultraviolet light source 1 mayinclude an oscillation unit or oscillation system 10, an amplificationunit or amplification system 20, a transport unit or transport system30, an extreme ultraviolet generation unit or extreme ultravioletgeneration system 40, and an exposure unit or exposure system 50. Theextreme ultraviolet light source 1 according to the present inventiveconcepts may be, for example, a laser-produced plasma (LPP) lightsource.

The oscillation unit 10 may include a first seed laser S1 thatoscillates a first pulse PP, a second seed laser S2 that oscillates asecond pulse MP, and a seed module SM. The seed module SM may beprovided between the amplification unit 20 and the first and second seedlasers S1 and S2. For example, each of the first and second seed lasersS1 and S2 may be an excimer laser, a solid state laser, or a CO₂ laser.The first pulse PP may be a pre-pulse, and the second pulse MP may be amain pulse. The first pulse PP and the second pulse MP may havedifferent wavelengths from each other. For example, the first pulse PPmay have a wavelength shorter than that of the second pulse MP, and mayalso have resolution higher than that of the second pulse MP.

The seed module SM may include a plurality of mirrors (see 11 of FIGS. 3to 5), a pulse control optical system (see A of FIGS. 3 to 5), and oneor more cameras (see C1 and C2 of FIGS. 3 to 5). With reference to FIGS.3 to 5, the following will describe a detailed configuration of theoscillation unit 10 that includes the seed module SM and the first andsecond seed lasers S1 and S2.

The first and second pulses PP and MP respectively oscillated from thefirst and second seed lasers S1 and S2 of the oscillation unit 10 maypass through the amplification unit 20 and the transport unit 30. Forexample, the first and second pulses PP and MP output from theoscillation unit 10 may travel along substantially the same path or inparallel with an offset from each other. In other words, the pulses PPand MP output from the oscillation unit 10 may travel alongsubstantially the same path or may be parallel and spaced apart from oneanother.

The amplification unit 20 may be provided between the oscillation unit10 and the extreme ultraviolet generation unit 40. The amplificationunit 20 may include at least one amplifier such as a power amplifier.For example, the amplification unit 20 may include first, second, third,and fourth amplifiers 21, 22, 23, and 24, but no limitation is imposedon the number of power amplifiers. The first to fourth amplifiers 21 to24, which are sequentially provided, may be called a high poweramplification chain (HPAC). Differently from that shown, theamplification unit 20 may further include a pre-amplifier between thefirst amplifier 21 and the seed module SM of the oscillation unit 10.The oscillation unit 10 that oscillates the first and second pulses PPand MP and the amplification unit 20 that amplifies the first and secondpulses PP and MP may be called a master oscillator power amplifier(MOPA).

The transport unit 30 may be provided between the amplification unit 20and the extreme ultraviolet generation unit 40. The transport unit 30may allow the first and second pulses PP and MP to travel from theamplification unit 20 to the extreme ultraviolet generation unit 40, andmay concurrently control the first and second pulses PP and MP. Forexample, the transport unit 30 may be configured to control positionsand/or angles of the first and second pulses PP and MP with a pluralityof mirrors 31. The extreme ultraviolet generation unit 40 may receivethe first and second pulses PP and MP that have passed through thetransport unit 30.

A pulse controller 35 may be provided between the transport unit 30 andthe extreme ultraviolet generation unit 40. The pulse controller 35 maycontrol the first pulse PP. When the first and second pulses PP and MPtravel toward the extreme ultraviolet generation unit 40, the pulsecontroller 35 may make a biased angle (see BA of FIG. 2) between thefirst and second pulses PP and MP that propagate along substantially thesame path at the amplification unit 20 and the transport unit 30.

The extreme ultraviolet generation unit 40 may be configured such thatthe first and second pulses PP and MP that have passed through thetransport unit 30 are used to generate extreme ultraviolet light EUV.The extreme ultraviolet light EUV may be a ray with a wavelength rangeof about 1 nm to about 100 nm, for example, of about 13.5 nm. Theexposure unit 50 may receive the extreme ultraviolet light EUV producedfrom the extreme ultraviolet generation unit 40. The exposure unit 50may be configured such that a wafer W receives the extreme ultravioletlight EUV that is reduced and projected thereto. The extreme ultravioletgeneration unit 40 and the exposure unit 50 will be further described indetail below with reference to FIG. 2.

FIG. 2 illustrates an enlarged schematic diagram showing an extremeultraviolet generation unit and an exposure unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts.

Referring to FIG. 2, the extreme ultraviolet generation unit 40 mayinclude a target generator DG, a target collector DC, a focusing mirrorFM, and a housing VS that envelops the target generator DG, the targetcollector DC, and the focusing mirror FM. The housing VS may be ahermetic vacuum chamber.

The target generator DG may produce targets at a regular period. Thetargets may include a material that emits the extreme ultraviolet lightEUV when converted into plasma PG. For example, the targets may includetin (Sn), lithium (Li), or xenon (Xe). When tin (Sn) is adopted, thetargets may include one of pure tin (Sn), tin compounds (e.g., SnBr₄,SnBr₂, or SnH₄), and tin alloys (e.g., tin-gallium alloy, tin-indiumalloy, or tin-indium-gallium alloy). The targets may be shaped like, forexample, droplets, streams, or clusters.

The first and second pulses PP and MP may be irradiated on the targetsthat migrate from the target generator DG toward the target collectorDC. The pulse controller (see 35 of FIG. 1) may allow the first andsecond pulses PP and MP to form a biased angle BA, and the first andsecond pulses PP and MP may be irradiated on different targets from eachother.

The first pulse PP may be irradiated on a first target D1, and thus thefirst target D1 may change its shape. A second target D2 may have itswidth and cross-sectional area greater than those of the first targetD1. For example, the first target D1 may have a width of equal to orless than about 40 μm, and the second target D2 may have a width ofequal to or greater than about 40 μm. Afterwards, the second pulse MPmay be irradiated on the second target D2, generating the plasma PG. Theextreme ultraviolet light EUV may be emitted from the second target D2that has been converted into the plasma PG.

Although the extreme ultraviolet light EUV is emitted in all directionsfrom the plasma PG, the focusing mirror FM may force the extremeultraviolet light EUV to concentrate on an intermediate focus IF. Afterthat, the extreme ultraviolet light EUV may be reflected from aplurality of mirrors 51 provided in the exposure unit 50, thereby beingprojected onto the wafer W. The wafer W may be provided on a wafersupport 70.

FIGS. 3 to 5 illustrate conceptual schematic diagrams showing paths ofpulses in an oscillation unit of a semiconductor manufacturing apparatusaccording to some example embodiments of the present inventive concepts.FIG. 3 shows a path of a first pulse in an oscillation unit, and FIGS. 4and 5 show a path of a second pulse in an oscillation unit.

Referring to FIGS. 3, 4, and 5, the seed module SM of the oscillationunit 10 may include a plurality of mirrors 11 configured to allow thefirst and second pulses PP and MP to travel along first and second pathsP1 and P2, a pulse control optical system A provided on a portion of thesecond path P2, and first and second cameras C1 and C2 that monitor thefirst pulse PP or the second pulse MP. Although not shown, a pluralityof optical devices may be provided between the seed module SM and thefirst and second seed lasers S1 and S2. The optical devices may be, forexample, an optical coupler, an acousto-optic modulator (AOM), or anelectro-optic modulator (EOM).

Each of the plurality of mirrors 11 may be one of a plain mirror, adichroic mirror, and a beam splitter, each of which is disposed to havean angle of incidence (AO′) of about 45°. The present inventiveconcepts, however, are not limited thereto, and the plurality of mirrors11 may have various shapes at different positions.

A portion of the first pulse PP that travels along the first path P1 maybe reflected from one of the plurality of mirrors 11, and may then beinput to the first camera C1. A portion of the second pulse MP thattravels along the second path P2 may be reflected from one of theplurality of mirrors 11, and may then be input to the first camera C1 orthe second camera C2. The first and second cameras C1 and C2 may monitorpositions and/or angles of the first pulse PP or the second pulse MP.For example, the first and second cameras C1 and C2 may monitor todetermine whether or not the first and second pulses PP and MP travelalong substantially the same path or whether or not one pulse travelsalong a path relatively deviated from that of other pulse.

Referring to FIG. 3, the first pulse PP may be oscillated from the firstseed laser S1. The first pulse PP may travel along the first path P1 inthe seed module SM. The first path P1 may be determined by the pluralityof mirrors 11 in the seed module SM. The first path P1 may not passthrough the pulse control optical system A that includes a first opticalelement 100 and a second optical element 200.

Referring to FIGS. 4 and 5, the second pulse MP may be oscillated fromthe second seed laser S2. The second pulse MP may travel along thesecond path P2 in the seed module SM. The second path P2 may bedetermined by the plurality of mirrors 11 in the seed module SM.

The second path P2 may include a first sub-path P21 that extends fromthe second seed laser S1 to the pulse control optical system A, a secondsub-path P22 in the pulse control optical system A, and a third sub-pathP23 that extends from the pulse control optical system A until thesecond pulse MP is output from the seed module SM.

At least portions of the first and third sub-paths P21 and P23 mayoverlap the first path P1 of the first pulse PP. The first and thirdsub-paths P21 and P23 may be a common path along which the first andsecond pulses PP and MP travel. In contrast, the second sub-path P22 maynot overlap the first path P1. The first pulse PP may not travel alongthe second sub-path P22. For this reason, the first and second pulses PPand MP may have therebetween no interference on the second sub-path P22.

Only the second pulse MP may be selectively controlled by the pulsecontrol optical system A provided on the second sub-path P22. As thepulse control optical system A selectively controls the second pulse MP,it may be possible to correct a phenomenon that one pulse travels alonga path relatively deviated from that of other pulse. The pulsecorrection mentioned above may cause the first and second pulses PP andMP to travel along substantially the same path or in parallel with anoffset from each other when the first and second pulses PP and MP areoutput from the seed module SM, and the first and second pulses PP andMP may have improved stability in the amplification unit 20 and thetransport unit 30. As the first and second pulses PP and MP haveimproved stability, the first and second pulses PP and MP may be exactlyor more precisely irradiated on the targets in the extreme ultravioletgeneration unit 40, and as a result, the semiconductor manufacturingapparatus according to the present inventive concepts may have increasedproductivity.

With reference to FIGS. 6 to 9, the following will describe a detailedconfiguration of the pulse control optical system A shown in FIGS. 3 to5.

FIG. 6 illustrates a conceptual schematic diagram showing a pulsecontrol optical system in an oscillation unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts.

Referring to FIG. 6, the pulse control optical system A may includefirst, second, and third optical elements 100, 200, and 300. The first,second, and third optical elements 100, 200, and 300 may be configuredto allow the pulse control optical system A to have therein the secondsub-path P22 along which is propagated the second pulse MP that isexplained as an input pulse IP and an output pulse OP. The first,second, and third optical elements 100, 200, and 300 may overlapvertically (e.g., in a Z-axis direction).

The input pulse IP may be reflected from the first optical element 100and may then be changed into the output pulse OP. The first opticalelement 100 may have a first central axis MCA. The first optical element100 may be a planar mirror, but the present inventive concepts are notlimited thereto, and a top surface 100 a of the first optical element100 may have various shapes. For example, the first optical element 100may include an actuator, which actuator may drive the first opticalelement 100 to move vertically (e.g., in the Z-axis direction).

The second optical element 200 may be a mirror substantially the same asone of the plurality of mirrors 11 in the seed module SM described withreference to FIGS. 3 to 5. The second optical element 200 may allow thefirst optical element 100 to receive the input pulse IP that is input tothe pulse control optical system A. The second optical element 200 maycause the pulse control optical system A to output the output pulse OPreflected from the first optical element 100.

The third optical element 300 may include a lens 310 that is providedbetween the first and second optical elements 100 and 200, and may alsoinclude an actuator 330 that drives the lens 310.

Between the first and second optical elements 100 and 200, the lens 310may be provided on paths along which are propagated by the input pulseIP and the output pulse OP. The lens 310 may have a focal length FL of,for example, several tens to several hundreds of millimeters (mm) Thefocal length FL of the lens 310 may be substantially the same as aspacing distance in the Z-axis direction between the lens 310 and thefirst optical element 100. The lens 310 may have a second central axisLCA. The second central axis LCA of the lens 310 may be spaced apartfrom the first central axis MCA of the first optical element 100.

The actuator 330 may contact at least a portion of the lens 310. Theactuator 330 may control a position of the lens 310 with respect to thefirst optical element 100. For example, the actuator 330 may drive thelens 310 to move in any of positive and negative X-axis, Y-axis, andZ-axis directions. The actuator 330 may be or include a piezoelectricdevice or a step motor, but the present inventive concepts are notlimited thereto.

As shown, the actuator 330 may drive the second central axis LCA of thelens 310 to move in the negative Y-axis direction from the first centralaxis MCA of the first optical element 100. The actuator 330 may induce afirst shift AS between the first central axis MCA and the second centralaxis LCA. The first shift AS may range, for example, from about severaltens of micrometers (μm) to about several millimeters (mm) This case,however, is merely exemplary, and the actuator 330 may drive the secondcentral axis LCA of the lens 310 to move to a different amount orlocation as needed.

The movement of the lens 310 driven by the actuator 330 may induce asecond shift BS between the input pulse IP and the output pulse OP. Thesecond shift BS may be the degree of how much the output pulse OP isoffset from the input pulse IP. For example, at a location where thesecond sub-path P22 begins and ends, the second shift BS may be definedto indicate a spacing distance in the Z-axis direction between a centralaxis of the input pulse IP and a central axis of the output pulse OP.The second shift BS may range, for example, from about several tens ofmicrometers (μm) to about several millimeters (mm) More narrowly, thesecond shift BS may range from about 10 μm to about 90 μm. In theoscillation unit 10, the second shift BS may control the second sub-pathP22 of the second pulse MP. The seed module SM may output both the firstpulse PP and the output pulse OP of the second pulse MP with the secondshift BS.

FIG. 7 illustrates a conceptual schematic diagram showing a pulsecontrol optical system in an oscillation unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts. For convenience of description, omission maybe made to avoid repetitive explanation of components the same orsubstantially the same as those described with reference to FIG. 6.

Referring to FIG. 7, the first optical element 100 may include a rotator110. The rotator 110 may be provided at a central portion of the firstoptical element 100. For example, the rotator 110 may drive the firstoptical element 100 to rotate at an angle in a clockwise direction (orcounterclockwise direction) on or relative to a plane formed by theY-axis and Z-axis directions. As the first optical element 100 rotates,the first central axis MCA of the first optical element 100 may alsorotate at the same angle. As shown, when the first optical element 100rotates at a tilt angle TA, the first central axis MCA may rotate at thetilt angle TA relative to the second central axis LCA of the lens 310.The tilt angle TA may have a range of, for example, about 0.1° to about1°. This case, however, is merely exemplary, and the rotator 110 maydrive the first optical element 100 to rotate at any angle as needed ina clockwise direction (or counterclockwise direction) on various planes.In conclusion, the second central axis LCA of the lens 310 may have aslope or angle with respect to the first central axis MCA of the firstoptical element 100.

The rotation of the first optical element 100 may induce a second shiftBS between the input pulse IP and the output pulse OP. The occurrence ofthe second shift BS due to the rotation of the first optical element 100caused by adjustment of the tilt angle TA may be substantially the sameas the occurrence of the second shift BS due to the movement of the lens310. For example, the second sub-path P22 of the second pulse MP may becontrolled by simultaneously using the rotator 110 to rotate the firstoptical element 100 and the actuator 330 to move the lens 310.

FIG. 8 illustrates a conceptual schematic diagram showing a pulsecontrol optical system in an oscillation unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts. For convenience of description, omission maybe made to avoid repetitive explanation of components the same orsubstantially the same as those described with reference to FIG. 6 or 7.

Referring to FIG. 8, the third optical element 300 may include arefraction device 350 between the lens 310 and the second opticalelement 200. For example, the refraction device 350 may include anactuator that drives the refraction device 350 to move leftward andrightward (e.g., in the Y-axis direction). Differently from that shown,the third optical element 300 may include a plurality of refractiondevices 350.

The refraction device 350 may have a top surface 350 a and a bottomsurface 350 b that are not parallel to each other. The top surface 350 aand the bottom surface 350 b of the refraction device 350 may face thesecond optical element 200 and the lens 310, respectively. For example,the top surface 350 a of the refraction device 350 may have a slope orangle with respect to the top surface 100 a of the first optical element100, and the bottom surface 350 b of the refraction device 350 may beparallel to the top surface 100 a of the first optical element 100.This, however, is merely exemplary. For example, a reverse relationshipmay be provided between the top surface 100 a of the first opticalelement 100 and the top and bottom surfaces 350 a and 350 b of therefraction device 350, and one or both of the top and bottom surfaces350 a and 350 b of the refraction device 350 may have a slope or anglewith respect to the top surface 100 a of the first optical element 100.

The refraction device 350 may refract the input pulse IP that isreflected from the second optical element 200 and then is directedtoward the first optical element 100. The refraction device 350 mayinduce a second shift BS between the input pulse IP and the output pulseOP. The occurrence of the second shift BS due to adjustment of slopesand positions of the top and bottom surfaces 350 a and 350 b of therefraction device 350 may be substantially the same as the occurrence ofthe second shift BS due to the movement of the lens 310 and/or therotation of the first optical element 100. For example, the secondsub-path P22 of the second pulse MP may be controlled by simultaneouslyusing the refraction device 350 to refract the input pulse IP and theactuator 330 to move the lens 310.

FIG. 9 illustrates a conceptual schematic diagram showing a pulsecontrol optical system in an oscillation unit of a semiconductormanufacturing apparatus according to some example embodiments of thepresent inventive concepts. For convenience of description, omission maybe made to avoid repetitive explanation of components the same orsubstantially the same as those described with reference to FIG. 6, 7,or 8.

Referring to FIG. 9, the pulse control optical system A may furtherinclude a monitoring element or monitoring system 500 between the secondoptical element 200 and the third optical element 300. For example, themonitoring element 500 may have an interferometer structure including abeam splitter 510 and a sensing mirror 530. The beam splitter 510 may beprovided on the second sub-path P22. The beam splitter 510 and the lens310 may overlap in the Z-axis direction. The sensing mirror 530 may bespaced apart from the beam splitter 510, the second optical element 200,and the third optical element 300. The sensing mirror 530 may not beprovided on the second sub-path P22. The sensing mirror 530 and the lens310 may not overlap in the Z-axis direction. The sensing mirror 530 mayinclude, for example, a wavefront sensor (WFS).

The monitoring element 500 may monitor positions and angles of thesecond pulse MP. Therefore, the monitoring element 500 may providefeedback in relation to controlling a drive of the actuator 330 and therotator (see 110 of FIG. 7) and to determining a structure of therefraction device (see 350 of FIG. 8).

A semiconductor manufacturing apparatus according to some exampleembodiments of the present inventive concepts may be configured suchthat a main pulse is controlled by optical elements, such as a lens,provided on a path along which only the main pulse travels.

Moreover, in an operating method of the semiconductor manufacturingapparatus according to some example embodiments of the present inventiveconcepts, the main pulse may be controlled by a pulse control opticalsystem including the lens, and thus it may be possible to improvestability of pulses and to increase productivity of the semiconductormanufacturing apparatus.

Although the present inventive concepts have been described inconnection with some example embodiments of the present inventiveconcepts illustrated in the accompanying drawings, it will be understoodby one of ordinary skill in the art that variations in form and detailmay be made therein without departing from the scope of the presentinventive concepts. The above disclosed embodiments should thus beconsidered illustrative and not restrictive. The inventive concepts aredefined by the following claims, with equivalents of the claims to beincluded therein.

1. A semiconductor manufacturing apparatus, comprising: an oscillationunit comprising a first seed laser, a second seed laser, and a seedmodule, wherein the first seed laser is configured to oscillate a firstpulse, and wherein the second seed laser is configured to oscillate asecond pulse; and an extreme ultraviolet generation unit configured touse the first and second pulses to generate extreme ultraviolet light,wherein the seed module comprises: a plurality of mirrors configured toallow the first and second pulses to travel along first and secondpaths, respectively; and a pulse control optical system comprising afirst optical element, a second optical element, and a third opticalelement, wherein the pulse control optical system is on the second paththat does not overlap the first path, and wherein the third opticalelement comprises a lens between the first optical element and thesecond optical element.
 2. The apparatus of claim 1, wherein the secondpulse comprises an input pulse that is input to the pulse controloptical system and an output pulse that is output from the pulse controloptical system, wherein the pulse control optical system is configuredto shift the output pulse with respect to the input pulse.
 3. Theapparatus of claim 2, further comprising an amplification unit betweenthe oscillation unit and the extreme ultraviolet generation unit,wherein the amplification unit is configured to receive the first pulseand the output pulse of the second pulse.
 4. The apparatus of claim 1,wherein the third optical element further comprises an actuatorconfigured to control a position of the lens.
 5. The apparatus of claim1, wherein the first optical element and the second optical element areconfigured to reflect the second pulse.
 6. The apparatus of claim 1,wherein a focal length of the lens is the same as a spacing distancebetween the lens and the first optical element.
 7. The apparatus ofclaim 1, further comprising an amplification unit between theoscillation unit and the extreme ultraviolet generation unit, whereinthe seed module is between the amplification unit and the first andsecond seed lasers.
 8. The apparatus of claim 1, wherein the firstoptical element comprises a rotator configured to rotate a central axisof the first optical element.
 9. The apparatus of claim 1, wherein thethird optical element further comprises a refraction device between thesecond optical element and the lens.
 10. The apparatus of claim 9,wherein the refraction device comprises a top surface that faces thesecond optical element and a bottom surface that faces the lens, whereinat least one of the top and bottom surfaces of the refraction device hasa slope or is angled with respect to a top surface of the first opticalelement.
 11. The apparatus of claim 1, wherein the pulse control opticalsystem further comprises a monitoring element between the second opticalelement and the third optical element, wherein the monitoring elementhas an interferometer structure.
 12. The apparatus of claim 11, whereinthe monitoring element comprises a beam splitter and a sensing mirror,the beam splitter being on the second path, and the sensing mirrorcomprising a wavefront sensor.
 13. A semiconductor manufacturingapparatus, comprising: an oscillation unit that comprises a first seedlaser, a second seed laser, and a seed module, wherein the first seedlaser is configured to oscillate a first pulse, and wherein the secondseed laser is configured to oscillate a second pulse; an extremeultraviolet generation unit comprising a target generator and a focusingmirror, wherein the extreme ultraviolet generation unit is configured togenerate extreme ultraviolet light by allowing the first and secondpulses to collide with corresponding targets produced from the targetgenerator; an amplification unit between the oscillation unit and theextreme ultraviolet generation unit, wherein the amplification unitcomprises a plurality of amplifiers; a transport unit configured toallow the first and second pulses to travel from the amplification unitto the extreme ultraviolet generation unit; and an exposure unitconfigured to provide a wafer with the extreme ultraviolet lightgenerated from the extreme ultraviolet generation unit, wherein the seedmodule includes: a plurality of mirrors configured to allow the firstand second pulses to travel along first and second paths, respectively;a pulse control optical system comprising a first optical element, asecond optical element, and a third optical element; and at least onecamera configured to monitor the first pulse or the second pulse,wherein the pulse control optical system is on the second path that doesnot overlap the first path, and wherein the third optical elementcomprises a lens between the first optical element and the secondoptical element.
 14. The apparatus of claim 13, wherein the second pulsecomprises an input pulse that is input to the pulse control opticalsystem and an output pulse that is output from the pulse control opticalsystem, wherein the pulse control optical system is configured to shiftthe output pulse with respect to the input pulse.
 15. The apparatus ofclaim 14, wherein the amplification unit is configured to receive thefirst pulse and the output pulse of the second pulse.
 16. The apparatusof claim 13, wherein the first optical element has a first central axis,the lens has a second central axis, and the second central axis isspaced apart from the first central axis.
 17. The apparatus of claim 13,wherein the first optical element has a first central axis, the lens hasa second central axis, and the second central axis has a slope or isangled with respect to the first central axis.
 18. The apparatus ofclaim 13, wherein the seed module is between the amplification unit andthe first and second seed lasers.
 19. An operating method of asemiconductor manufacturing apparatus, the operating method comprising:oscillating a first pulse and a second pulse from an oscillation unitthat comprises a first seed laser, a second seed laser, and a seedmodule; controlling the second pulse on a path of the second pulse inthe seed module, wherein the path of the second pulse does not overlap apath of the first pulse; amplifying the first and second pulses througha plurality of amplifiers; and colliding the first and second pulseswith corresponding targets to generate extreme ultraviolet light,wherein controlling the second pulse is performed in a pulse controloptical system comprising a lens.
 20. The operating method of claim 19,wherein controlling the second pulse includes inducing a shift betweenan input pulse that is input to the pulse control optical system and anoutput pulse that is output from the pulse control optical system.21-24. (canceled)